Toshiba Semiconductor and Storage RN1910,LF(CT

Manufacturer
Toshiba Semiconductor and Storage
Froduct Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Description
TRANS 2NPN PREBIAS 0.1W US6

Reference Price: 0.03169/pcs
Our Price:

Components Mall Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly

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Part Status :
Active
Transistor Type :
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) (Ohms) :
4.7k
Resistor - Emitter Base (R2) (Ohms) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
Frequency - Transition :
250MHz
Power - Max :
100mW
Mounting Type :
Surface Mount
Package / Case :
6-TSSOP, SC-88, SOT-363
Supplier Device Package :
US6

Cross References

Search Part Number:"RN19"Included word is 15

Part Number Manufacturer Description
RN1901,LF(CT Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1901FETE85LF Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.1W ES6
RN1902,LF(CT Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6
RN1902FE,LF(CT Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.1W ES6
RN1902T5LFT Toshiba Semiconductor and Storage TRANS 2NPN PREBIAS 0.2W US6

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