Toshiba Semiconductor and Storage RN1910,LF(CT
- Manufacturer
- Toshiba Semiconductor and Storage
- Froduct Category
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Description
- TRANS 2NPN PREBIAS 0.1W US6
Reference Price: 0.03169/pcs
Our Price:
Components Mall Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
Warm Tips: Please fill out the below form and we will contact you as soon as possible.
- Part Status :
- Active
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) :
- 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Resistor - Base (R1) (Ohms) :
- 4.7k
- Resistor - Emitter Base (R2) (Ohms) :
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Frequency - Transition :
- 250MHz
- Power - Max :
- 100mW
- Mounting Type :
- Surface Mount
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package :
- US6
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Search Part Number:"RN19"Included word is 15
Part Number | Manufacturer | Description |
---|---|---|
RN1901,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 |
RN1901FETE85LF | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 |
RN1902,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 |
RN1902FE,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 |
RN1902T5LFT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 |
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