Toshiba Semiconductor and Storage RN1910,LF(CT
- 제품 카테고리
- 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드
- 기술
- TRANS 2NPN PREBIAS 0.1W US6
참고 가격 : 0.03169/pcs
Our Price:
Components Mall Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
따뜻한 팁 : 아래 양식을 작성해 주시면되도록 빨리 연락 드리겠습니다.
- 부품 상태 :
- Active
- 트랜지스터 유형 :
- 2 NPN - Pre-Biased (Dual)
- 전류 - 콜렉터 (Ic) (최대) :
- 100mA
- 전압 - 콜렉터 에미 터 파괴 (최대) :
- 50V
- 저항기 -베이스 (R1) (옴) :
- 4.7k
- 저항기 - 이미 터베이스 (R2) (옴) :
- -
- DC 전류 이득 (hFE) (최소) @ Ic, Vce :
- 120 @ 1mA, 5V
- Vce 포화도 (최대) @Ib, Ic :
- 300mV @ 250µA, 5mA
- 전류 - 콜렉터 차단 (최대) :
- 100nA (ICBO)
- 빈도 - 전환 :
- 250MHz
- 전력 - 최대 :
- 100mW
- 실장 형 :
- Surface Mount
- 패키지 / 케이스 :
- 6-TSSOP, SC-88, SOT-363
- 공급 업체 장치 패키지 :
- US6
상호 참조
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검색 부품 번호 :"RN19"15 단어 포함
Part Number | 제조사 | 기술 |
---|---|---|
RN1901,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 |
RN1901FETE85LF | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 |
RN1902,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 |
RN1902FE,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 |
RN1902T5LFT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 |
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