Toshiba Semiconductor and Storage HN1C01FU-Y(T5L,F,T

Part Status :

Active

Transistor Type :

2 NPN (Dual)

Current - Collector (Ic) (Max) :

150mA

Voltage - Collector Emitter Breakdown (Max) :

50V

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 2mA, 6V

Power - Max :

200mW

Frequency - Transition :

80MHz

Operating Temperature :

125°C (TJ)

Mounting Type :

Surface Mount

Package / Case :

6-TSSOP, SC-88, SOT-363

Supplier Device Package :

US6