Rohm Semiconductor EMB3T2R

Part Status :

Active

Transistor Type :

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max) :

100mA

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Base (R1) (Ohms) :

4.7k

Resistor - Emitter Base (R2) (Ohms) :

-

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA, 5V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 5mA

Current - Collector Cutoff (Max) :

-

Frequency - Transition :

250MHz

Power - Max :

150mW

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Supplier Device Package :

EMT6