ON Semiconductor 55GN01CA-TB-E

Part Status :

Active

Transistor Type :

NPN

Voltage - Collector Emitter Breakdown (Max) :

10V

Frequency - Transition :

4.5GHz

Noise Figure (dB Typ @ f) :

1.9dB @ 1GHz

Gain :

9.5dB

Power - Max :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA, 5V

Current - Collector (Ic) (Max) :

70mA

Operating Temperature :

150°C (TJ)

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Supplier Device Package :

3-CP