Toshiba Semiconductor and Storage RN2602(TE85L,F)

fabbricante
Toshiba Semiconductor and Storage
categoria di prodotto
Transistor - Bipolari (BJT) - Array, pre-polarizzati
Descrizione
TRANS 2PNP PREBIAS 0.3W SM6

Prezzo di riferimento: 0.05787/pcs
Our Price:

Components Mall Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly

Consigli caldi: Si prega di compilare il modulo sottostante e ti contatteremo al più presto.

Stato parte :
Active
Transistor Type :
2 PNP - Pre-Biased (Dual)
Corrente - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistore - Base (R1) (Ohm) :
10k
Resistor - Emitter Base (R2) (Ohm) :
10k
DC Current Gain (hFE) (Min) @ Ic, Vce :
50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Corrente - Limite del collettore (max) :
100nA (ICBO)
Frequenza - Transizione :
200MHz
Potenza - Max :
300mW
Tipo di montaggio :
Surface Mount
Pacchetto / caso :
SC-74, SOT-457
Pacchetto dispositivo fornitore :
SM6

Riferimenti incrociati

Cerca numero parte:"RN260"La parola inclusa è 15

Part Number fabbricante Descrizione
RN2601(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.3W SM6
RN2602(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.3W SM6
RN2603(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.3W SM6
RN2604(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.3W SM6
RN2605(TE85L,F) Toshiba Semiconductor and Storage TRANS 2PNP PREBIAS 0.3W SM6

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