Toshiba Semiconductor and Storage RN1905FE,LF(CB
- fabbricante
- Toshiba Semiconductor and Storage
- categoria di prodotto
- Transistor - Bipolari (BJT) - Array, pre-polarizzati
- Descrizione
- TRANS 2NPN PREBIAS 0.1W ES6
Prezzo di riferimento: 0.03169/pcs
Our Price:
Components Mall Sources
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
39% - we order from franchised distributor with lead time
35% - we order from stocking distributor
17% - OEM excess
9% - Order from MFG. directly
Consigli caldi: Si prega di compilare il modulo sottostante e ti contatteremo al più presto.
- Stato parte :
- Active
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Corrente - Collector (Ic) (Max) :
- 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Resistore - Base (R1) (Ohm) :
- 2.2k
- Resistor - Emitter Base (R2) (Ohm) :
- 47k
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250µA, 5mA
- Corrente - Limite del collettore (max) :
- 500nA
- Frequenza - Transizione :
- 250MHz
- Potenza - Max :
- 100mW
- Tipo di montaggio :
- Surface Mount
- Pacchetto / caso :
- SOT-563, SOT-666
- Pacchetto dispositivo fornitore :
- ES6
Riferimenti incrociati
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Cerca numero parte:"RN190"La parola inclusa è 15
| Part Number | fabbricante | Descrizione |
|---|---|---|
| RN1901,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1901FETE85LF | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 |
| RN1902,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 |
| RN1902FE,LF(CT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 |
| RN1902T5LFT | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 |
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